zinc blende structure
- 网络闪锌矿结构;闪锌矿型结构
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XRD results indicated that the products are of cubic zinc blende structure .
XRD研究表明,产物为立方闪锌矿结构;
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With increasing pressure , the wurtzite structre was transformed to zinc blende structure at 11.2 GPa .
压力达到11.2GPa时,纳米硫化锌空心球中的纤锌矿结构全部转变为闪锌矿结构。
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The study indicates that the film belongs to a zinc blende structure .
分析表明,该薄膜的结构符合闪锌矿的特征。
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Influence of the chemical bond on the energy bands of the zinc blende structure
化学键对闪锌矿型晶体能带结构的影响
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The synthesis and characterization of ZnS nanowires with zinc blende structure
立方闪锌矿结构ZnS纳米线的合成与表征
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Synthesis and Characterization of Monodisperse CdSe Quantum Dots with Zinc Blende Structure
单分散闪锌矿型CdSe量子点的合成及表征
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CdSe QDs of zinc blende structure have been synthesized by a simple ethylenediamine-assisted method .
采用简单的乙二胺辅助方法合成出闪锌矿型结构的CdSeQDs。
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A mechanism of crystal structure transformation of CdSe QDs has been proposed and the formation of zinc blende structure is discussed .
提出了CdSeQDs晶体结构转变的机制并对闪锌矿型结构CdSeQDs的形成进行了讨论。
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Optical Phonon Behavior of Mix-Crystal Zn_ ( 1-x ) Mn_xSe with Zinc Blende Structure
闪锌矿结构Zn(1-x)MnxSe混晶光学声子行为
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This article also discusses the electrical properties of zinc blende structure InN thin films and presents the potential application of InN thin films for devices ( mainly for high electron mobility transistors ) .
同时也涉及了部分立方闪锌矿结构InN的电学特性和InN在器件(主要是高电子迁移率晶体管器件)上的潜在应用。
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The energy band , geometry parameters , density of states , and cohesive energy of CdSe with zinc blende structure , wurtzite structure , rock-salt structure , and CsCl structure are calculated , respectively .
分别计算了闪锌矿结构,纤锌矿结构,岩盐结构和CsCl结构CdSe的能带、几何参数、电子态密度和内聚能。
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The obtained results indicate that CdSe with zinc blende structure and wurtzite structure are direct band gap semiconductors ; CdSe with rock-salt structure is indirect band gap semiconductor ; CdSe with CsCl structure is semimetal .
结果表明,闪锌矿结构和纤锌矿结构CdSe为直接带隙半导体材料;盐岩结构CdSe为间接带隙半导体材料;CsCl结构CdSe为半金属材料。
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Studies on Phonon Spectra of Zinc - Blende Structure Semiconductors
闪锌矿结构半导体声子谱研究